2SA2013-TD-E ON Semiconductor

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Part Number	2SA2013-TD-E
Manufacturer	ON Semiconductor
Quantity in stock	749360 Pieces
Market Price	-
Our Better Price	Send by email: [email protected]
Delivery Time	1 day (can ship today)
Description	Trans GP BJT PNP 50V 4A 4-Pin(3+Tab) PCP T R
Category	Discrete Semiconductor
Family	Bipolar Transistor
ROHS Compliant	Yes
MSL Level	2SA2013-TD-E
Datasheet download	2SA2013-TD-E.pdf

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2SA2013-TD-E Specifications

Part Number	2SA2013-TD-E
Minimum DC Current Gain	200@500mA@2V
Maximum DC Collector Current	4 A
Maximum Collector Emitter Saturation Voltage	0.18@50mA@1A\|0.34@100mA@2A V
Rad Hard	No
Operating Temperature	-55 to 150 °C
Maximum Emitter Base Voltage	6 V
Max Processing Temp	260
Type	PNP
Product Dimensions	4.5 x 2.5 x 1.5 mm
Maximum Base Emitter Saturation Voltage	1.2@100mA@2A V
Maximum Power Dissipation	1300 mW
Lead Finish	Matte Tin
Mounting	Surface Mount
Pin Count	4
Maximum Collector Emitter Voltage	50 V
Supplier Package	PCP
Maximum Collector Base Voltage	50 V
MSL Level	1
Package	4PCP
Replacement Part Number	PART-2SA2013-TD-E
Weight	Contact us
Country of Origin	-

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