Part Number | 2SA2013-TD-E |
---|---|
Manufacturer | ON Semiconductor |
Quantity in stock | 749360 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | Trans GP BJT PNP 50V 4A 4-Pin(3+Tab) PCP T R |
Category | Discrete Semiconductor |
Family | Bipolar Transistor |
ROHS Compliant | Yes |
MSL Level | 2SA2013-TD-E |
Datasheet download | ![]() |
Part Number | 2SA2013-TD-E |
---|---|
Minimum DC Current Gain | 200@500mA@2V |
Maximum DC Collector Current | 4 A |
Maximum Collector Emitter Saturation Voltage | 0.18@50mA@1A|0.34@100mA@2A V |
Rad Hard | No |
Operating Temperature | -55 to 150 °C |
Maximum Emitter Base Voltage | 6 V |
Max Processing Temp | 260 |
Type | PNP |
Product Dimensions | 4.5 x 2.5 x 1.5 mm |
Maximum Base Emitter Saturation Voltage | 1.2@100mA@2A V |
Maximum Power Dissipation | 1300 mW |
Lead Finish | Matte Tin |
Mounting | Surface Mount |
Pin Count | 4 |
Maximum Collector Emitter Voltage | 50 V |
Supplier Package | PCP |
Maximum Collector Base Voltage | 50 V |
MSL Level | 1 |
Package | 4PCP |
Replacement Part Number | PART-2SA2013-TD-E |
Weight | Contact us |
Country of Origin | - |
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