2SA2013-TD-E ON Semiconductor

2SA2013-TD-E Images

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Part Number 2SA2013-TD-E
Manufacturer ON Semiconductor
Quantity in stock 749360 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT PNP 50V 4A 4-Pin(3+Tab) PCP T R
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level 2SA2013-TD-E
Datasheet download 2SA2013-TD-E.pdf
Request Quotation for 2SA2013-TD-E

2SA2013-TD-E Specifications

Part Number 2SA2013-TD-E
Minimum DC Current Gain 200@500mA@2V
Maximum DC Collector Current 4 A
Maximum Collector Emitter Saturation Voltage 0.18@50mA@1A|0.34@100mA@2A V
Rad Hard No
Operating Temperature -55 to 150 °C
Maximum Emitter Base Voltage 6 V
Max Processing Temp 260
Type PNP
Product Dimensions 4.5 x 2.5 x 1.5 mm
Maximum Base Emitter Saturation Voltage 1.2@100mA@2A V
Maximum Power Dissipation 1300 mW
Lead Finish Matte Tin
Mounting Surface Mount
Pin Count 4
Maximum Collector Emitter Voltage 50 V
Supplier Package PCP
Maximum Collector Base Voltage 50 V
MSL Level 1
Package 4PCP
Replacement Part Number PART-2SA2013-TD-E
Weight Contact us
Country of Origin -

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