2SB1216S-E ON Semiconductor

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Part Number	2SB1216S-E
Manufacturer	ON Semiconductor
Quantity in stock	655530 Pieces
Market Price	-
Our Better Price	Send by email: [email protected]
Delivery Time	1 day (can ship today)
Description	Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) TP Bag
Category	Discrete Semiconductor
Family	Bipolar Transistor
ROHS Compliant	Yes
MSL Level	2SB1216S-E
Datasheet download	2SB1216S-E.pdf

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2SB1216S-E Specifications

Part Number	2SB1216S-E
Mounting	Through Hole
Maximum Power Dissipation	1000 mW
Minimum DC Current Gain	[email protected]@5V
Supplier Package	TP
Product Dimensions	6.5 x 2.3 x 5.5 mm
Maximum Base Emitter Saturation Voltage	[email protected]@2A V
Maximum DC Collector Current	4 A
Type	PNP
Operating Temperature	-55 to 150 °C
Pin Count	3
Rad Hard	No
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	[email protected]@2A V
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	6 V
Package	3TP
Replacement Part Number	PART-2SB1216S-E
Weight	Contact us
Country of Origin	-

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