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| Part Number | 2SB1216S-E |
|---|---|
| Manufacturer | ON Semiconductor |
| Quantity in stock | 655530 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) TP Bag |
| Category | Discrete Semiconductor |
| Family | Bipolar Transistor |
| ROHS Compliant | Yes |
| MSL Level | 2SB1216S-E |
| Datasheet download |  2SB1216S-E.pdf |
| Part Number | 2SB1216S-E |
|---|---|
| Mounting | Through Hole |
| Maximum Power Dissipation | 1000 mW |
| Minimum DC Current Gain | [email protected]@5V |
| Supplier Package | TP |
| Product Dimensions | 6.5 x 2.3 x 5.5 mm |
| Maximum Base Emitter Saturation Voltage | [email protected]@2A V |
| Maximum DC Collector Current | 4 A |
| Type | PNP |
| Operating Temperature | -55 to 150 °C |
| Pin Count | 3 |
| Rad Hard | No |
| Maximum Collector Base Voltage | 120 V |
| Maximum Collector Emitter Saturation Voltage | [email protected]@2A V |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Emitter Base Voltage | 6 V |
| Package | 3TP |
| Replacement Part Number | PART-2SB1216S-E |
| Weight | Contact us |
| Country of Origin | - |
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