2SC3649T-TD-E ON Semiconductor

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Part Number	2SC3649T-TD-E
Manufacturer	ON Semiconductor
Quantity in stock	269200 Pieces
Market Price	-
Our Better Price	Send by email: [email protected]
Delivery Time	1 day (can ship today)
Description	Trans GP BJT NPN 160V 1.5A 4-Pin(3+Tab) PCP T R
Category	Discrete Semiconductor
Family	Bipolar Transistor
ROHS Compliant	Yes
MSL Level	2SC3649T-TD-E
Datasheet download	2SC3649T-TD-E.pdf

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2SC3649T-TD-E Specifications

Part Number	2SC3649T-TD-E
Lead Finish	Matte Tin
Maximum Collector Base Voltage	180 V
Pin Count	4
Mounting	Surface Mount
MSL Level	1
Maximum Power Dissipation	500 mW
Minimum DC Current Gain	200@100mA@5V
Maximum Base Emitter Saturation Voltage	1.2@50mA@500mA V
Maximum Collector Emitter Voltage	160 V
Supplier Package	PCP
Maximum Collector Emitter Saturation Voltage	0.45@50mA@500mA V
Type	NPN
Operating Temperature	-55 to 150 °C
Rad Hard	No
Max Processing Temp	260
Maximum DC Collector Current	1.5 A
Maximum Emitter Base Voltage	6 V
Product Dimensions	4.5 x 2.5 x 1.5 mm
Package	4PCP
Replacement Part Number	PART-2SC3649T-TD-E
Weight	Contact us
Country of Origin	-

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