2SC5551AE-TD-E ON Semiconductor

2SC5551AE-TD-E Images

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Part Number 2SC5551AE-TD-E
Manufacturer ON Semiconductor
Quantity in stock 499210 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT NPN 30V 0.3A 4-Pin(3+Tab) PCP
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level 2SC5551AE-TD-E
Datasheet download 2SC5551AE-TD-E.pdf
Request Quotation for 2SC5551AE-TD-E

2SC5551AE-TD-E Specifications

Part Number 2SC5551AE-TD-E
Pin Count 4
Mounting Surface Mount
Supplier Package PCP
Minimum DC Current Gain 90@50mA@5V
Maximum Collector Base Voltage 40 V
Maximum Base Emitter Saturation Voltage 1.2@5mA@50mA V
Maximum Collector Emitter Voltage 30 V
Product Dimensions 4.5 x 2.5 x 1.5 mm
Maximum Power Dissipation 1300 mW
Maximum DC Collector Current 0.3 A
Maximum Emitter Base Voltage 2 V
Rad Hard No
Type NPN
Operating Temperature -55 to 150 °C
Maximum Collector Emitter Saturation Voltage 0.3@5mA@50mA V
Package 4PCP
Replacement Part Number PART-2SC5551AE-TD-E
Weight Contact us
Country of Origin -

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