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| Part Number | HN1A07F(TE85L.F) |
|---|---|
| Manufacturer | Toshiba |
| Quantity in stock | 350340 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | Trans GP BJT PNP 50V 0.5A 6-Pin SOT-26 Embossed T R |
| Category | Discrete Semiconductor |
| Family | Bipolar Transistor |
| ROHS Compliant | Yes |
| MSL Level | HN1A07F(TE85L.F) |
| Datasheet download |  HN1A07F(TE85L.F).pdf |
| Part Number | HN1A07F(TE85L.F) |
|---|---|
| Maximum Collector Emitter Saturation Voltage | 0.25@10mA@100mA V |
| Maximum DC Collector Current | 0.5 A |
| Mounting | Surface Mount |
| Lead Finish | Tin|Silver |
| Type | PNP |
| Product Dimensions | 2.9 x 1.6 x 1.1 |
| Maximum Collector Base Voltage | 50 V |
| Pin Count | 6 |
| MSL Level | 1 |
| Supplier Package | SOT-26 |
| Maximum Collector Emitter Voltage | 50 V |
| Minimum DC Current Gain | 70@100mA@1V|25@400mA@1V |
| Maximum Transition Frequency | 200 MHz |
| Rad Hard | No |
| Maximum Emitter Base Voltage | 5 V |
| Operating Temperature | -55 to 150 °C |
| Max Processing Temp | 260 |
| Maximum Power Dissipation | 300 mW |
| Package | 6SOT-26 |
| Replacement Part Number | PART-HN1A07F(TE85L.F) |
| Weight | Contact us |
| Country of Origin | - |
