HN4A56JU(TE85L.F) Toshiba

HN4A56JU(TE85L.F) Images

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Part Number HN4A56JU(TE85L.F)
Manufacturer Toshiba
Quantity in stock 896180 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT PNP 50V 0.15A 5-Pin SOT-353 Embossed T R
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level HN4A56JU(TE85L.F)
Datasheet download HN4A56JU(TE85L.F).pdf
Request Quotation for HN4A56JU(TE85L.F)

HN4A56JU(TE85L.F) Specifications

Part Number HN4A56JU(TE85L.F)
Maximum Transition Frequency 60(Min) MHz
Maximum Collector Emitter Saturation Voltage 0.3@10mA@100mA V
Maximum DC Collector Current 0.15 A
Maximum Power Dissipation 200 mW
Rad Hard No
Maximum Emitter Base Voltage 5 V
Operating Temperature -55 to 150 °C
Max Processing Temp 260
Supplier Package SOT-353
Minimum DC Current Gain 400@2mA@6V
Pin Count 5
Mounting Surface Mount
Lead Finish Tin|Silver
Maximum Collector Emitter Voltage 50 V
Maximum Collector Base Voltage 50 V
MSL Level 1
Product Dimensions 2 x 1.25 x 0.9
Type PNP
Package 5SOT-363
Replacement Part Number PART-HN4A56JU(TE85L.F)
Weight Contact us
Country of Origin -

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