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| Part Number | MT3S20TU(TE85L) |
|---|---|
| Manufacturer | Toshiba |
| Quantity in stock | 642700 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | Trans GP BJT NPN 12V 0.08A 3-Pin UFM Embossed T R |
| Category | Discrete Semiconductor |
| Family | Bipolar Transistor |
| ROHS Compliant | Yes |
| MSL Level | MT3S20TU(TE85L) |
| Datasheet download |  MT3S20TU(TE85L).pdf |
| Part Number | MT3S20TU(TE85L) |
|---|---|
| Rad Hard | No |
| Mounting | Surface Mount |
| Family | MT3S20TU |
| Maximum Collector Emitter Voltage | 12 V |
| Operating Temperature | -55 to 150 °C |
| Maximum Transition Frequency | 7 MHz |
| Lead Free | Yes |
| Maximum Power Dissipation | 900 mW |
| Maximum Emitter Base Voltage | 1.5 V |
| Type | NPN |
| Packaging | Embossed Tape and Reel |
| Minimum DC Current Gain | 100@50mA@5V |
| Maximum Collector Base Voltage | 20 V |
| Maximum DC Collector Current | 0.08 A |
| Package | 3UFM |
| Replacement Part Number | PART-MT3S20TU(TE85L) |
| Weight | Contact us |
| Country of Origin | - |
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