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| Part Number | PBSS4350T215 |
|---|---|
| Manufacturer | Nexperia |
| Quantity in stock | 208560 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | Trans GP BJT NPN 50V 2A 3-Pin TO-236AB T R |
| Category | Discrete Semiconductor |
| Family | Bipolar Transistor |
| ROHS Compliant | Yes |
| MSL Level | PBSS4350T215 |
| Datasheet download |  PBSS4350T215.pdf |
| Part Number | PBSS4350T215 |
|---|---|
| Type | NPN |
| Operating Temperature | -65 to 150 °C |
| Maximum Power Dissipation | 1200 mW |
| Maximum DC Collector Current | 2 A |
| Maximum Collector Emitter Voltage | 50 V |
| Max Processing Temp | 260 |
| Supplier Package | TO-236AB |
| Maximum Collector Base Voltage | 50 V |
| Maximum Collector Emitter Saturation Voltage | 0.08@[email protected]|0.16@50mA@1A|0.28@100mA@2A|0.26@200mA@2A|0.37@300mA@3A V |
| Minimum DC Current Gain | 300@100mA@2V|300@500mA@2V|300@1A@2V|200@2A@2V|100@3A@2V |
| Maximum Emitter Base Voltage | 5 V |
| Rad Hard | No |
| Pin Count | 3 |
| Mounting | Surface Mount |
| Product Dimensions | 3 x 1.4 x 1 mm |
| Lead Finish | Tin |
| Maximum Base Emitter Saturation Voltage | 1.1@100mA@2A|1.2@300mA@3A V |
| MSL Level | 1 |
| Package | 3TO-236AB |
| Replacement Part Number | PART-PBSS4350T215 |
| Weight | Contact us |
| Country of Origin | - |
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