| Part Number | PBSS8110T,215 |
|---|---|
| Manufacturer | Nexperia |
| Quantity in stock | 627640 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | Trans GP BJT NPN 100V 1A 3-Pin TO-236AB T R |
| Category | Discrete Semiconductor |
| Family | Bipolar Transistor |
| ROHS Compliant | Yes |
| MSL Level | PBSS8110T,215 |
| Datasheet download |
| Part Number | PBSS8110T,215 |
|---|---|
| Maximum Base Emitter Saturation Voltage | 1.05@100mA@1A V |
| Rad Hard | No |
| Minimum DC Current Gain | 150@1mA@10V|150@250mA@10V|[email protected]@10V|80@1A@10V |
| Lead Finish | Tin |
| Pin Count | 3 |
| Operating Temperature | -65 to 150 °C |
| Type | NPN |
| Supplier Package | TO-236AB |
| Product Dimensions | 3 x 1.4 x 1 mm |
| Maximum Collector Emitter Saturation Voltage | 0.04@10mA@100mA|0.12@50mA@500mA|0.2@100mA@1A V |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Power Dissipation | 480 mW |
| Maximum Emitter Base Voltage | 5 V |
| Max Processing Temp | 260 |
| MSL Level | 1 |
| Maximum Collector Base Voltage | 120 V |
| Maximum DC Collector Current | 1 A |
| Mounting | Surface Mount |
| Package | 3TO-236AB |
| Replacement Part Number | PART-PBSS8110T,215 |
| Weight | Contact us |
| Country of Origin | - |