SMMBT5551LT1G ON Semiconductor

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Part Number	SMMBT5551LT1G
Manufacturer	ON Semiconductor
Quantity in stock	416610 Pieces
Market Price	-
Our Better Price	Send by email: [email protected]
Delivery Time	1 day (can ship today)
Description	Trans GP BJT NPN 160V 0.06A 3-Pin SOT-23 T R
Category	Discrete Semiconductor
Family	Bipolar Transistor
ROHS Compliant	Yes
MSL Level	SMMBT5551LT1G
Datasheet download	SMMBT5551LT1G.pdf

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SMMBT5551LT1G Specifications

Part Number	SMMBT5551LT1G
Product Dimensions	2.9 x 1.3 x 0.94 mm
Type	NPN
Rad Hard	No
Operating Temperature	-55 to 150 °C
Maximum Emitter Base Voltage	6 V
Maximum Power Dissipation	300 mW
Lead Finish	Matte Tin
Maximum Collector Base Voltage	180 V
Mounting	Surface Mount
Maximum Base Emitter Saturation Voltage	1@1mA@10mA\|1@5mA@50mA V
Maximum DC Collector Current	0.06 A
Supplier Package	SOT-23
Minimum DC Current Gain	80@1mA@5V\|80@10mA@5V\|30@50mA@5V
MSL Level	1
Maximum Collector Emitter Saturation Voltage	0.15@1mA@10mA\|0.2@5mA@50mA V
Pin Count	3
Screening Level	Automotive
Maximum Collector Emitter Voltage	160 V
Package	3SOT-23
Replacement Part Number	PART-SMMBT5551LT1G
Weight	Contact us
Country of Origin	-

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