M28W640HCB70N6E Micron

M28W640HCB70N6E Images

Please contact us for more photos of M28W640HCB70N6E

Part Number M28W640HCB70N6E
Manufacturer Micron
Quantity in stock 548370 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description NOR Flash Parallel 3V 3.3V 64Mbit 4M x 16bit 70ns 48-Pin TSOP Tray
Category Memory IC
Family Flash IC
ROHS Compliant Yes
MSL Level M28W640HCB70N6E
Datasheet download M28W640HCB70N6E.pdf
Request Quotation for M28W640HCB70N6E

M28W640HCB70N6E Specifications

Part Number M28W640HCB70N6E
Programming Voltage 2.7 to 3.6|11.4 to 12.6 V
Support of Common Flash Interface Yes
Timing Type Asynchronous
Number of Bits per Word 16 Bit
Block Organization Asymmetrical
Maximum Operating Supply Voltage 3.6 V
Operating Temperature -40 to 85 °C
Address Bus Width 22 Bit
Command Compatible No
Architecture Sectored
Boot Block Yes
Cell Type NOR
OE Access Time 20 ns
Screening Level Industrial
Page Size 4 Words
Product Dimensions 12 x 18.4 x 1 mm
Interface Type Parallel
Max Processing Temp 260
Pin Count 48
Number of Words 4 MWords
Maximum Random Access Time 70 ns
Location Of Boot Block Bottom
Maximum Operating Current 18 mA
MSL Level 3
Supplier Package TSOP
Support of Page Mode Yes
Typical Operating Supply Voltage 3|3.3 V
Maximum Page Access Time 25 ns
Simultaneous Read/Write Support No
ECC Support No
Erase Suspend/Resume Modes Support Yes
Lead Finish Matte Tin|Gold
Minimum Operating Supply Voltage 2.7 V
Density 64 Mb
Maximum Erase Time 10/Block s
Maximum Programming Time 0.01 ms
Program Current 20 mA
Rad Hard No
Sector Size 8 x 8|64 x 127 KB
Mounting Surface Mount
Package 48TSOP
Replacement Part Number PART-M28W640HCB70N6E
Weight Contact us
Country of Origin -

Related parts for M28W640HCB70N6E

Image Part Number and Brand Brief Description and PDF Datasheet

MT29F4G08ABBDAHC:D

Micron

SLC NAND Flash Parallel 1.8V 4Gbit 512M x 8bit 25ns 63-Pin VFBGA

Download PDF datasheet for MT29F4G08ABBDAHC:D.pdf

W25Q64FVZPIQ-TR

Winbond

1.8V 64M-BIT SERIAL FLASH MEMORY WITH

-

N25Q032A13ESCA0F

Micron

NOR Flash Serial-SPI 3V 3.3V 32Mbit 4M x 8bit 7ns 8-Pin SO N T R

Download PDF datasheet for N25Q032A13ESCA0F.pdf

W25Q16JVSSIG-TR

Winbond

16M-BIT SERIAL FLASH MEMORY WITH UNIFORM

Download PDF datasheet for W25Q16JVSSIG-TR.pdf

W25Q64FWZPIG

Winbond

64M SPI FLASH , WSON 6*5

Download PDF datasheet for W25Q64FWZPIG.pdf

MT29F512G08CUCDBJ6-6R:D

Micron

MLC NAND Flash Parallel 3.3V 512Gbit 64G X 8bit 132-Pin LBGA

Download PDF datasheet for MT29F512G08CUCDBJ6-6R:D.pdf

W25X20CLSNIG

Winbond

NOR Flash Serial-SPI 2.5V 3.3V 2Mbit 256K x 8bit 8ns 8-Pin SOIC Tube

Download PDF datasheet for W25X20CLSNIG.pdf

W25Q64FVSTIG

Winbond

3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL

Download PDF datasheet for W25Q64FVSTIG.pdf

PC28F512P30EFB

Micron

NOR Flash Parallel Serial 1.8V 512Mbit 32M X 16bit 64-Pin BGA

Download PDF datasheet for PC28F512P30EFB.pdf

TC58BYG1S3HBAI6

Toshiba

2Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V

Download PDF datasheet for TC58BYG1S3HBAI6.pdf