Part Number | M29DW128G60ZA6E |
---|---|
Manufacturer | Micron |
Quantity in stock | 505770 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | NOR Flash Parallel 3V 3.3V 128Mbit 8M x 16bit 60ns 64-Pin TBGA Tray |
Category | Memory IC |
Family | Flash IC |
ROHS Compliant | Yes |
MSL Level | M29DW128G60ZA6E |
Datasheet download | M29DW128G60ZA6E.pdf |
Part Number | M29DW128G60ZA6E |
---|---|
Boot Block | Yes |
Support of Page Mode | Yes |
Maximum Operating Supply Voltage | 3.6 V |
Timing Type | Asynchronous |
Sector Size | 8 x 16|64 x 254 KB |
Interface Type | Parallel |
Mounting | Surface Mount |
Typical Operating Supply Voltage | 3|3.3 V |
Address Bus Width | 24|23 Bit |
Maximum Operating Current | 10 mA |
Architecture | Sectored |
Pin Count | 64 |
Cell Type | NOR |
Maximum Random Access Time | 60 ns |
ECC Support | No |
Number of Bits per Word | 16 Bit |
Erase Suspend/Resume Modes Support | Yes |
Command Compatible | Yes |
Programming Voltage | 2.7 to 3.6|8.5 to 9.5 V |
Screening Level | Industrial |
Supplier Package | TBGA |
Maximum Erase Time | 400/Chip s |
Simultaneous Read/Write Support | Yes |
Number of Words | 8 MWords |
Location Of Boot Block | Bottom|Top |
Page Size | 8 Words |
Block Organization | Asymmetrical |
OE Access Time | 20 ns |
Program Current | 20 mA |
Rad Hard | No |
Maximum Page Access Time | 25 ns |
Operating Temperature | -40 to 85 °C |
Max Processing Temp | 260 |
Maximum Programming Time | 400000/Chip ms |
Lead Finish | Tin|Silver|Copper |
Density | 128 Mb |
Product Dimensions | 10 x 13 x 0.8 |
Minimum Operating Supply Voltage | 2.7 V |
Package | 64TBGA |
Replacement Part Number | PART-M29DW128G60ZA6E |
Weight | Contact us |
Country of Origin | - |
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