M29DW323DB70N6E Micron

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Part Number M29DW323DB70N6E
Manufacturer Micron
Quantity in stock 860550 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description NOR Flash Parallel 3V 3.3V 32Mbit 4M 2M x 8bit 16bit 70ns 48-Pin TSOP Tray
Category Memory IC
Family Flash IC
ROHS Compliant Yes
MSL Level M29DW323DB70N6E
Datasheet download M29DW323DB70N6E.pdf
Request Quotation for M29DW323DB70N6E

M29DW323DB70N6E Specifications

Part Number M29DW323DB70N6E
Product Dimensions 12 x 18.4 x 1 mm
Erase Suspend/Resume Modes Support Yes
Address Bus Width 22|21 Bit
Maximum Random Access Time 70 ns
Rad Hard No
Operating Temperature -40 to 85 °C
Block Organization Asymmetrical
Density 32 Mb
Cell Type NOR
Architecture Sectored
Maximum Programming Time 200000/Chip ms
Boot Block Yes
Bank Size 8/24 Mb
Maximum Operating Current 10 mA
Interface Type Parallel
Location Of Boot Block Bottom
OE Access Time 30 ns
Max Processing Temp 260
Mounting Surface Mount
Simultaneous Read/Write Support No
Lead Finish Matte Tin
Screening Level Automotive
Pin Count 48
Number of Bits per Word 8/16 Bit
Supplier Package TSOP
Minimum Operating Supply Voltage 2.7 V
Support of Common Flash Interface Yes
Sector Size 8 x 8|64 x 63 KB
Maximum Operating Supply Voltage 3.6 V
Command Compatible Yes
Maximum Erase Time 200/Chip s
Support of Page Mode No
Typical Operating Supply Voltage 3|3.3 V
Program Current 20 mA
Timing Type Asynchronous
Number of Words 2 MWords
ECC Support No
Programming Voltage 2.7 to 3.6|11.5 to 12.5 V
Package 48TSOP
Replacement Part Number PART-M29DW323DB70N6E
Weight Contact us
Country of Origin -

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