M29W160EB80ZA3SE Micron

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Part Number M29W160EB80ZA3SE
Manufacturer Micron
Quantity in stock 515790 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description NOR Flash Parallel 3V 3.3V 16Mbit 2M 1M x 8bit 16bit 70ns 48-Pin TFBGA Tray
Category Memory IC
Family Flash IC
ROHS Compliant Yes
MSL Level M29W160EB80ZA3SE
Datasheet download M29W160EB80ZA3SE.pdf
Request Quotation for M29W160EB80ZA3SE

M29W160EB80ZA3SE Specifications

Part Number M29W160EB80ZA3SE
Number of Words 2 MWords
Maximum Erase Time 120/Chip s
Number of Bits per Word 8/16 Bit
OE Access Time 30 ns
Supplier Package TFBGA
Lead Finish Tin/Silver/Copper
Operating Temperature -40 to 125 °C
Block Organization Asymmetrical
Program Current 20 mA
Maximum Random Access Time 70 ns
Max Processing Temp 260
Product Dimensions 8 x 6 x 0.9 mm
Rad Hard No
Minimum Operating Supply Voltage 2.7 V
Simultaneous Read/Write Support No
Programming Voltage 2.7 to 3.6 V
Boot Block Yes
Maximum Programming Time 120000/Chip ms
Timing Type Asynchronous
Maximum Operating Supply Voltage 3.6 V
Mounting Surface Mount
Typical Operating Supply Voltage 3|3.3 V
Support of Page Mode No
Architecture Sectored
Maximum Operating Current 10 mA
Density 16 Mb
Cell Type NOR
Sector Size 8 x 2|16 x 1|32 x 1|64 x 31 KB
Location Of Boot Block Bottom
ECC Support No
Command Compatible Yes
Address Bus Width 21|20 Bit
Erase Suspend/Resume Modes Support Yes
Screening Level Automotive
Pin Count 48
Interface Type Parallel
Package 48TFBGA
Replacement Part Number PART-M29W160EB80ZA3SE
Weight Contact us
Country of Origin -

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