| Part Number | M29W320DB80ZA3E |
|---|---|
| Manufacturer | Micron |
| Quantity in stock | 801220 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | NOR Flash Parallel 3V 3.3V 32Mbit 4M 2M x 8bit 16bit 80ns 48-Pin TFBGA Tray |
| Category | Memory IC |
| Family | Flash IC |
| ROHS Compliant | Yes |
| MSL Level | M29W320DB80ZA3E |
| Datasheet download |
| Part Number | M29W320DB80ZA3E |
|---|---|
| Boot Block | Yes |
| Pin Count | 48 |
| Maximum Operating Supply Voltage | 3.6 V |
| Timing Type | Asynchronous |
| Mounting | Surface Mount |
| Typical Operating Supply Voltage | 3|3.3 V |
| Support of Page Mode | No |
| Architecture | Sectored |
| Maximum Operating Current | 10 mA |
| Sector Size | 8 x 2|16 x 1|32 x 1|64 x 63 KB |
| Cell Type | NOR |
| Address Bus Width | 22|21 Bit |
| Location Of Boot Block | Bottom |
| ECC Support | No |
| Maximum Random Access Time | 80 ns |
| Command Compatible | Yes |
| Erase Suspend/Resume Modes Support | Yes |
| Screening Level | Automotive |
| Interface Type | Parallel |
| Number of Words | 2 MWords |
| Number of Bits per Word | 8/16 Bit |
| Program Current | 20 mA |
| Supplier Package | TFBGA |
| OE Access Time | 30 ns |
| Block Organization | Asymmetrical |
| Operating Temperature | -40 to 125 °C |
| Density | 32 Mb |
| Maximum Erase Time | 200/Chip s |
| Maximum Programming Time | 200000/Chip ms |
| Product Dimensions | 8 x 6 x 0.9 mm |
| Rad Hard | No |
| Minimum Operating Supply Voltage | 2.5 V |
| Simultaneous Read/Write Support | No |
| Programming Voltage | 2.7 to 3.6|11.5 to 12.5 V |
| Package | 48TFBGA |
| Replacement Part Number | PART-M29W320DB80ZA3E |
| Weight | Contact us |
| Country of Origin | - |
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