M29W640GB70NA6E Micron

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Part Number M29W640GB70NA6E
Manufacturer Micron
Quantity in stock 136440 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Flash Mem Parallel 3V 3.3V 64M-Bit 8M x 8 4M x 16 70ns 48-Pin TSOP Tray
Category Memory IC
Family Flash IC
ROHS Compliant Yes
MSL Level M29W640GB70NA6E
Datasheet download M29W640GB70NA6E.pdf
Request Quotation for M29W640GB70NA6E

M29W640GB70NA6E Specifications

Part Number M29W640GB70NA6E
Address Bus Width 23|22 Bit
Rad Hard No
Command Compatible No
Architecture Sectored
Cell Type NOR
Timing Type Asynchronous
Interface Type Parallel
Boot Block Yes
Support of Page Mode Yes
ECC Support No
OE Access Time 30 ns
Sector Size 8 x 8|64 x 127 KB
Maximum Operating Current 10 mA
Product Dimensions 12 x 18.4 x 1 mm
Number of Bits per Word 8/16 Bit
Maximum Random Access Time 70 ns
Program Current 20 mA
Location Of Boot Block Bottom
Block Organization Asymmetrical
Typical Operating Supply Voltage 3|3.3 V
Supplier Package TSOP
Density 64 Mb
Erase Suspend/Resume Modes Support Yes
Simultaneous Read/Write Support No
Programming Voltage 2.7 to 3.6|11.5 to 12.5 V
Operating Temperature -40 to 85 °C
Max Processing Temp 260
Lead Finish Matte Tin
Number of Words 8 MWords
Page Size 4 Words
Maximum Erase Time 400/Chip s
Maximum Programming Time 400000/Chip ms
Maximum Page Access Time 30 ns
Pin Count 48
Minimum Operating Supply Voltage 2.7 V
Maximum Operating Supply Voltage 3.6 V
Mounting Surface Mount
Screening Level Industrial
Package 48TSOP
Replacement Part Number PART-M29W640GB70NA6E
Weight Contact us
Country of Origin -

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