GT50JR22(STA1,E,S) Toshiba

GT50JR22(STA1,E,S) Images

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Part Number GT50JR22(STA1,E,S)
Manufacturer Toshiba
Quantity in stock 316210 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description TOSGT50JR22(STA1,E,S) IGBT FOR SOFT SWIT
Category Discrete Semiconductor
Family IGBT Chip
ROHS Compliant Yes
MSL Level GT50JR22(STA1,E,S)
Datasheet download GT50JR22(STA1,E,S).pdf
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GT50JR22(STA1,E,S) Specifications

Part Number GT50JR22(STA1,E,S)
Maximum Gate Emitter Voltage ±25 V
Packaging Bulk
Rad Hard No
Maximum Continuous Collector Current 50 A
Configuration Single
Operating Temperature -55 to 175 °C
Maximum Collector Emitter Voltage 600 V
Lead Free Yes
Mounting Through Hole
Family GT50JR22
Channel Type N
Package 3TO-3P
Replacement Part Number PART-GT50JR22(STA1,E,S)
Weight Contact us
Country of Origin -

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