Part Number | TC58BYG1S3HBAI6 |
---|---|
Manufacturer | Toshiba |
Quantity in stock | 379510 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | 2Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V |
Category | Memory IC |
Family | Flash IC |
ROHS Compliant | Yes |
MSL Level | TC58BYG1S3HBAI6 |
Datasheet download | ![]() |
Part Number | TC58BYG1S3HBAI6 |
---|---|
Number of Bits per Word | 8 Bit |
Number of Words | 256 MWords |
Density | 2 Gb |
ECC Support | Yes |
Minimum Operating Supply Voltage | 1.7 V |
Screening Level | Industrial |
Supplier Package | VFBGA |
Cell Type | SLC NAND |
Programming Voltage | 1.7 to 1.95 V |
Page Size | 2 KB |
Timing Type | Synchronous |
Rad Hard | No |
Product Dimensions | 8 x 6.5 x 0.74(Max) |
Operating Temperature | -40 to 85 °C |
Pin Count | 67 |
Interface Type | Serial |
Maximum Operating Supply Voltage | 1.95 V |
Block Organization | Symmetrical |
Typical Operating Supply Voltage | 1.8 V |
Mounting | Surface Mount |
Sector Size | 128 x 2048 KB |
Architecture | Sectored |
Package | 67VFBGA |
Replacement Part Number | PART-TC58BYG1S3HBAI6 |
Weight | Contact us |
Country of Origin | - |
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