TC58NYG1S3HBAI6 Toshiba

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Part Number TC58NYG1S3HBAI6
Manufacturer Toshiba
Quantity in stock 335720 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description 2Gbit, generation: 24nm, VCC=1.7 to 1.95V
Category Memory IC
Family Flash IC
ROHS Compliant Yes
MSL Level TC58NYG1S3HBAI6
Datasheet download TC58NYG1S3HBAI6.pdf
Request Quotation for TC58NYG1S3HBAI6

TC58NYG1S3HBAI6 Specifications

Part Number TC58NYG1S3HBAI6
Rad Hard No
Minimum Operating Supply Voltage 1.7 V
Operating Temperature -40 to 85 °C
Number of Words 256 MWords
Maximum Programming Time 0.3 ms
Page Size 2048 byte
Number of Bits per Word 8 Bit
Density 2 Gb
Programming Voltage 1.7 to 1.95 V
Maximum Random Access Time 25 ns
Simultaneous Read/Write Support No
Block Organization Symmetrical
Typical Operating Supply Voltage 1.8 V
Mounting Surface Mount
Support of Page Mode No
Supplier Package VFBGA
Architecture Sectored
Pin Count 67
Maximum Operating Supply Voltage 1.95 V
Boot Block No
Screening Level Industrial
Sector Size 128 x 2048 KB
Cell Type NAND
Package 67VFBGA
Replacement Part Number PART-TC58NYG1S3HBAI6
Weight Contact us
Country of Origin -

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