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| Part Number | TC58NYG1S3HBAI6 |
|---|---|
| Manufacturer | Toshiba |
| Quantity in stock | 335720 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | 2Gbit, generation: 24nm, VCC=1.7 to 1.95V |
| Category | Memory IC |
| Family | Flash IC |
| ROHS Compliant | Yes |
| MSL Level | TC58NYG1S3HBAI6 |
| Datasheet download |  TC58NYG1S3HBAI6.pdf |
| Part Number | TC58NYG1S3HBAI6 |
|---|---|
| Rad Hard | No |
| Minimum Operating Supply Voltage | 1.7 V |
| Operating Temperature | -40 to 85 °C |
| Number of Words | 256 MWords |
| Maximum Programming Time | 0.3 ms |
| Page Size | 2048 byte |
| Number of Bits per Word | 8 Bit |
| Density | 2 Gb |
| Programming Voltage | 1.7 to 1.95 V |
| Maximum Random Access Time | 25 ns |
| Simultaneous Read/Write Support | No |
| Block Organization | Symmetrical |
| Typical Operating Supply Voltage | 1.8 V |
| Mounting | Surface Mount |
| Support of Page Mode | No |
| Supplier Package | VFBGA |
| Architecture | Sectored |
| Pin Count | 67 |
| Maximum Operating Supply Voltage | 1.95 V |
| Boot Block | No |
| Screening Level | Industrial |
| Sector Size | 128 x 2048 KB |
| Cell Type | NAND |
| Package | 67VFBGA |
| Replacement Part Number | PART-TC58NYG1S3HBAI6 |
| Weight | Contact us |
| Country of Origin | - |
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