TH58NYG3S0HBAI4 Toshiba

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Part Number TH58NYG3S0HBAI4
Manufacturer Toshiba
Quantity in stock 318470 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description 8G(4G x 2)bit, generation: 24nm, VCC=1.7 to 1.95V
Category Memory IC
Family Flash IC
ROHS Compliant Yes
MSL Level TH58NYG3S0HBAI4
Datasheet download TH58NYG3S0HBAI4.pdf
Request Quotation for TH58NYG3S0HBAI4

TH58NYG3S0HBAI4 Specifications

Part Number TH58NYG3S0HBAI4
Sector Size 256 x 4096 KB
Number of Bits per Word 8 Bit
Erase Suspend/Resume Modes Support No
Supplier Package TFBGA
Rad Hard No
Minimum Operating Supply Voltage 1.7 V
Interface Type Serial
Operating Temperature -40 to 85 °C
Maximum Programming Time 0.7/Page ms
Maximum Operating Current 30 mA
Block Organization Symmetrical
Maximum Processing Temperature 260 °C
Simultaneous Read/Write Support No
Page Size 4352 byte
Page Read Current 30 mA
Timing Type Asynchronous
Support of Common Flash Interface No
Typical Operating Supply Voltage 1.8 V
Support of Page Mode No
Mounting Surface Mount
Number of Words 1 G
Program Current 30 mA
Architecture Sectored
Cell Type NAND
Pin Count 63
Boot Block No
Density 8 Gb
Maximum Operating Supply Voltage 1.95 V
Maximum Erase Time 0.01/Block s
Command Compatible No
Screening Level Industrial
Package Dimensions 11 x 9 x 0.7 mm
ECC Support Yes
Package 63TFBGA
Replacement Part Number PART-TH58NYG3S0HBAI4
Weight Contact us
Country of Origin -

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