MT29F1G08ABBEAH4:E TR Micron

MT29F1G08ABBEAH4:E TR Images

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Part Number MT29F1G08ABBEAH4:E TR
Manufacturer Micron
Quantity in stock 154320 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description SLC NAND Flash Parallel 1.8V 1Gbit 128M x 8Bit 63-Pin VFBGA T R
Category Memory IC
Family Flash IC
ROHS Compliant Yes
MSL Level MT29F1G08ABBEAH4:E TR
Datasheet download MT29F1G08ABBEAH4:E TR.pdf
Request Quotation for MT29F1G08ABBEAH4:E TR

MT29F1G08ABBEAH4:E TR Specifications

Part Number MT29F1G08ABBEAH4:E TR
Density 1 Gb
Command Compatible No
Erase Suspend/Resume Modes Support No
Screening Level Commercial
Operating Temperature 0 to 70 °C
Maximum Operating Current 20 mA
Rad Hard No
Product Dimensions 9 x 11 x 0.75(Max)
Architecture Sectored
Number of Words 128 m
Block Organization Symmetrical
Maximum Operating Supply Voltage 1.95 V
Sector Size 128 x 1024 KB
Max Processing Temp 260
Mounting Surface Mount
Page Size 2048 byte
Typical Operating Supply Voltage 1.8 V
Interface Type Parallel
Maximum Erase Time 0.003/Block s
Pin Count 63
Support of Page Mode Yes
Simultaneous Read/Write Support No
Minimum Operating Supply Voltage 1.7 V
Boot Block No
ECC Support Yes
Supplier Package VFBGA
Number of Bits per Word 8 Bit
Maximum Programming Time 0.6/Page ms
Lead Finish Tin|Silver|Copper
Programming Voltage 1.7 to 1.95 V
Timing Type Asynchronous
Cell Type SLC NAND
Program Current 20 mA
Package 63VFBGA
Replacement Part Number PART-MT29F1G08ABBEAH4:E TR
Weight Contact us
Country of Origin -

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