NAND256W3A2BN6E Micron

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Part Number NAND256W3A2BN6E
Manufacturer Micron
Quantity in stock 131000 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description SLC NAND Flash Parallel 3V 3.3V 256Mbit 32M x 8bit 12us 48-Pin TSOP Tray
Category Memory IC
Family Flash IC
ROHS Compliant Yes
MSL Level NAND256W3A2BN6E
Datasheet download NAND256W3A2BN6E.pdf
Request Quotation for NAND256W3A2BN6E

NAND256W3A2BN6E Specifications

Part Number NAND256W3A2BN6E
Product Dimensions 12 x 18.4 x 1 mm
Page Size 256/512 Words/Byte
Command Compatible No
Erase Suspend/Resume Modes Support No
Maximum Operating Current 20 mA
Rad Hard No
Operating Temperature -40 to 85 °C
Maximum Random Access Time 12000 ns
Lead Finish Matte Tin|Gold
Architecture Sectored
Number of Words 32 MWords
Block Organization Symmetrical
Interface Type Parallel
Support of Page Mode Yes
Mounting Surface Mount
Max Processing Temp 260
Address Bus Width 25 Bit
MSL Level 3
Maximum Erase Time 0.003/Block s
Simultaneous Read/Write Support No
Program Current 20 mA
Typical Operating Supply Voltage 3|3.3 V
Maximum Programming Time 0.5/Page ms
Sector Size 16 x 2048 KB
Timing Type Asynchronous
Cell Type SLC NAND
Maximum Page Access Time 50(Min) ns
Pin Count 48
Number of Bits per Word 8 Bit
Supplier Package TSOP
ECC Support Yes
Minimum Operating Supply Voltage 2.7 V
Maximum Operating Supply Voltage 3.6 V
Boot Block No
Screening Level Industrial
Density 256 Mb
Package 48TSOP
Replacement Part Number PART-NAND256W3A2BN6E
Weight Contact us
Country of Origin -

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