IPB027N10N3 G Infineon

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Part Number	IPB027N10N3 G
Manufacturer	Infineon
Quantity in stock	158450 Pieces
Market Price	-
Our Better Price	Send by email: [email protected]
Delivery Time	1 day (can ship today)
Description	Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T R
Category	Discrete Semiconductor
Family	Transistor
ROHS Compliant	Yes
MSL Level	IPB027N10N3 G
Datasheet download	IPB027N10N3 G.pdf

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IPB027N10N3 G Specifications

Part Number	IPB027N10N3 G
Channel Mode	Enhancement
Maximum Drain Source Voltage	100 V
RDS-on	2.7@10V mOhm
Supplier Package	TO-263
Channel Type	N
Maximum Gate Source Voltage	±20 V
Lead Finish	Tin Over Nickel
Typical Turn-Off Delay Time	84 ns
Operating Temperature	-55 to 175 °C
Product Dimensions	10.31(Max) x 9.45(Max) x 4.57(Max)
Pin Count	3
Maximum Continuous Drain Current	120 A
Mounting	Surface Mount
MSL Level	1
Rad Hard	No
Typical Turn-On Delay Time	34 ns
Typical Rise Time	58 ns
Max Processing Temp	245
Typical Fall Time	28 ns
Package	3TO-263
Replacement Part Number	PART-IPB027N10N3 G
Weight	Contact us
Country of Origin	-

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