SI2312BDS-T1-GE3 Vishay

SI2312BDS-T1-GE3 Images

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Part Number SI2312BDS-T1-GE3
Manufacturer Vishay
Quantity in stock 703520 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T R
Category Discrete Semiconductor
Family Transistor
ROHS Compliant Yes
MSL Level SI2312BDS-T1-GE3
Datasheet download SI2312BDS-T1-GE3.pdf
Request Quotation for SI2312BDS-T1-GE3

SI2312BDS-T1-GE3 Specifications

Part Number SI2312BDS-T1-GE3
Typical Fall Time 10 ns
Typical Turn-On Delay Time 9 ns
Operating Temperature -55 to 150 °C
Rad Hard No
Typical Rise Time 30 ns
Typical Turn-Off Delay Time 35 ns
Maximum Gate Source Voltage ±8 V
Max Processing Temp 260
RDS-on [email protected] mOhm
Channel Mode Enhancement
Lead Finish Matte Tin
Mounting Surface Mount
Channel Type N
Product Dimensions 3.04 x 1.4 x 1.02 mm
Maximum Continuous Drain Current 3.9 A
Maximum Drain Source Voltage 20 V
Pin Count 3
MSL Level 1
Supplier Package TO-236
Package 3TO-236
Replacement Part Number PART-SI2312BDS-T1-GE3
Weight Contact us
Country of Origin -

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