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| Part Number | TC58NYG2S0HBAI4 |
|---|---|
| Manufacturer | Toshiba |
| Quantity in stock | 522970 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | 4Gbit, generation: 24nm, VCC=1.7 to 1.95V |
| Category | Memory IC |
| Family | Flash IC |
| ROHS Compliant | Yes |
| MSL Level | TC58NYG2S0HBAI4 |
| Datasheet download |  TC58NYG2S0HBAI4.pdf |
| Part Number | TC58NYG2S0HBAI4 |
|---|---|
| Timing Type | Synchronous |
| Simultaneous Read/Write Support | No |
| Erase Suspend/Resume Modes Support | No |
| Command Compatible | No |
| Product Dimensions | 11 x 9 x 0.74(Max) |
| Cell Type | NAND |
| Sector Size | 256 x 2048 KB |
| Operating Temperature | -40 to 85 °C |
| Maximum Erase Time | 0.01/Block s |
| Rad Hard | No |
| Architecture | Sectored |
| Number of Words | 512 MWords |
| Density | 4 Gb |
| Maximum Operating Supply Voltage | 1.95 V |
| Block Organization | Symmetrical |
| Page Size | 4352 byte |
| Typical Operating Supply Voltage | 1.8 V |
| Address Bus Width | 1 Bit |
| Mounting | Surface Mount |
| Max Processing Temp | 260 |
| Pin Count | 63 |
| Maximum Operating Current | 30 mA |
| Interface Type | Serial |
| Programming Voltage | 1.7 to 1.95 V |
| Program Current | 30 mA |
| Maximum Programming Time | 0.7 ms |
| Support of Page Mode | No |
| Minimum Operating Supply Voltage | 1.7 V |
| Boot Block | No |
| Screening Level | Industrial |
| ECC Support | Yes |
| Supplier Package | TFBGA |
| Number of Bits per Word | 8 Bit |
| Package | 63TFBGA |
| Replacement Part Number | PART-TC58NYG2S0HBAI4 |
| Weight | Contact us |
| Country of Origin | - |
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