TC58NYG2S0HBAI4 Toshiba

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Part Number TC58NYG2S0HBAI4
Manufacturer Toshiba
Quantity in stock 522970 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description 4Gbit, generation: 24nm, VCC=1.7 to 1.95V
Category Memory IC
Family Flash IC
ROHS Compliant Yes
MSL Level TC58NYG2S0HBAI4
Datasheet download TC58NYG2S0HBAI4.pdf
Request Quotation for TC58NYG2S0HBAI4

TC58NYG2S0HBAI4 Specifications

Part Number TC58NYG2S0HBAI4
Timing Type Synchronous
Simultaneous Read/Write Support No
Erase Suspend/Resume Modes Support No
Command Compatible No
Product Dimensions 11 x 9 x 0.74(Max)
Cell Type NAND
Sector Size 256 x 2048 KB
Operating Temperature -40 to 85 °C
Maximum Erase Time 0.01/Block s
Rad Hard No
Architecture Sectored
Number of Words 512 MWords
Density 4 Gb
Maximum Operating Supply Voltage 1.95 V
Block Organization Symmetrical
Page Size 4352 byte
Typical Operating Supply Voltage 1.8 V
Address Bus Width 1 Bit
Mounting Surface Mount
Max Processing Temp 260
Pin Count 63
Maximum Operating Current 30 mA
Interface Type Serial
Programming Voltage 1.7 to 1.95 V
Program Current 30 mA
Maximum Programming Time 0.7 ms
Support of Page Mode No
Minimum Operating Supply Voltage 1.7 V
Boot Block No
Screening Level Industrial
ECC Support Yes
Supplier Package TFBGA
Number of Bits per Word 8 Bit
Package 63TFBGA
Replacement Part Number PART-TC58NYG2S0HBAI4
Weight Contact us
Country of Origin -

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