SRN4012T-2R2M Bourns

SRN4012T-2R2M Images

Please contact us for more photos of SRN4012T-2R2M

Part Number SRN4012T-2R2M
Manufacturer Bourns
Quantity in stock 616190 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Ind Power Semi-Shielded Wirewound 2.2uH 20% 100KHz 6Q-Factor Ferrite 1.9A T R
Category Inductor
Family Inductor Surface Mount
ROHS Compliant Yes
MSL Level SRN4012T-2R2M
Datasheet download SRN4012T-2R2M.pdf
Request Quotation for SRN4012T-2R2M

SRN4012T-2R2M Specifications

Part Number SRN4012T-2R2M
Pin Count 2
Maximum DC Current 620
Package/Case 4 X 4 X 1.2(Max)
Rad Hard No
Inductance 22
Lead Finish Tin
MSL Level 1
Tolerance 20 %
Technology Wirewound
Supplier Package SMD
Maximum DC Resistance 400
Test Frequency 100 kHz
Protection Style Semi-Shielded
Max Processing Temp 260
Core Material Ferrite
Product Dimensions 4 x 4 x 1.2(Max)
Maximum Self Resonant Frequency
Minimum Quality Factor 10@100KHz
Type Power
Operating Temperature -40 to 125 °C
Product Depth 4 mm
Product Height 1.2(Max) mm
Product Length 4 mm
Replacement Part Number PART-SRN4012T-2R2M
Weight Contact us
Country of Origin -

Related parts for SRN4012T-2R2M

Image Part Number and Brand Brief Description and PDF Datasheet

PA2983.230HLT

Pulse

Ind Power Bead 23nH 15% 100KHz 30A T R

Download PDF datasheet for PA2983.230HLT.pdf

DLW31SN261SQ2L

Murata Manufacturing

Ind Common Mode Choke Wirewound 260Ohm 25% 100MHz 310mA 1206 Embossed T R

Download PDF datasheet for DLW31SN261SQ2L.pdf

DLW43SH101XK2L

Murata Manufacturing

Ind Common Mode Choke Wirewound 100uH -30% to 50% 1MHz 200mA 1812 Embossed Plastic T R

Download PDF datasheet for DLW43SH101XK2L.pdf

HK160827NJ-T

TAIYO YUDEN

Ind High Frequency Chip Multi-Layer 27nH 5% 100MHz 12Q-Factor Ceramic 300mA 0603 T R

Download PDF datasheet for HK160827NJ-T.pdf

CTX99-19272-R

Eaton

POWER INDUCTOR

-

NS10145T3R3NNA

TAIYO YUDEN

Ind Power Shielded Wirewound 3.3uH 30% 100KHz 6.1A T R

Download PDF datasheet for NS10145T3R3NNA.pdf

IFSC0806AZER4R7M01

Vishay

Ind High Current Shielded Wirewound 4.7uH 20% 100KHz 900mA 0806 T R

Download PDF datasheet for IFSC0806AZER4R7M01.pdf

PE-0603CD180JTT

Pulse

Ind RF Chip Wirewound 18nH 5% 250MHz 35Q-Factor Ceramic 700mA 0603 T R

Download PDF datasheet for PE-0603CD180JTT.pdf

IHLP2525CZERR22M01

Vishay

Ind High Current Shielded 220nH 20% 100KHz 23A 2525 T R

Download PDF datasheet for IHLP2525CZERR22M01.pdf

CIH10T3N9SNC

Samsung Electro-Mechanics

Ind High Frequency Chip Multi-Layer 3.9nH 0.3nH 100MHz 10Q-Factor 300mA 0603 Paper T R

Download PDF datasheet for CIH10T3N9SNC.pdf