BR L2012T1R5M

Ind Power Chip Wirewound 1.5uH 20% 7.96MHz Ferrite 750mA 0805 T R

BR L3225T1R0M

Ind Power Chip Wirewound 1uH 20% 100KHz Ferrite 2.2A 1210 T R

IHSM4825ER3R3L

Ind High Current Wirewound 3.3uH 15% 1KHz Ferrite 4.6A 4825 T R

CB2518T100K

Ind Power Chip Wirewound 10uH 10% 2.52MHz Ferrite 820mA 1007 T R

IHSM7832EB330L

Ind High Current Wirewound 33uH 15% 1KHz Ferrite 3A 7832 Bulk

HK16083N9S-T

INDUCTOR, HI FREQ MULTILAYER, 0603, 3.9 0.3NH, T&R

BK2125HM601-T

FERRITE BEAD, MULTILAYER CHIP, 0805, 600 OHMS 25%, T&R

ASMPH-0603-1R0M-T

Ind Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 1A 0603 T R

ASPI-0403S-222M-T

Ind Power Shielded Wirewound 2.2mH 20% 100KHz 100mA T R

ASPI-0630LR-1R5M-T15

Ind Power Molded Wirewound 1.5uH 20% 10A 2826 T R

AIMC-0402-6N8S-T

Ind Chip Unshielded Multi-Layer 6.8nH 0.3nH 100MHz 9Q-Factor Ceramic 300mA 0402 T R

AIMC-0402-8N2S-T

Ind Chip Unshielded Multi-Layer 8.2nH 0.3nH 100MHz 9Q-Factor Ceramic 300mA 0402 T R

ASPI-0630LR-R56M-T15

Ind Power Molded Wirewound 560nH 20% 17A 2826 T R

IHLP1212ABERR47M11

Ind High Current Shielded Wirewound 470nH 20% 100KHz 6.4A 1212 T R

BLM21AG221SN1D

Ind Chip Bead 220Ohm 25% 100MHz Ferrite 200mA 0805 Paper T R

BLM31AJ601SH1L

Ind Chip Bead 600Ohm 25% 100MHz Ferrite 200mA 1206 Embossed T R

DLW31SH222SQ2L

Ind Common Mode Choke Wirewound 2.2KOhm 25% 100MHz 80mA 1206 Embossed T R

LQG15HS8N2J02D

Ind RF Chip Multi-Layer 8.2nH 5% 100MHz 8Q-Factor Air 300mA 0402 Paper T R

LQH32CN470K53L

Ind Power Chip Unshielded Wirewound 47uH 10% 1MHz Ferrite 170mA 1210 Embossed T R

LQH32PN2R2NN0L

Ind Power Chip Shielded Wirewound 2.2uH 30% 1MHz Ferrite 1.6A 1210 Embossed T R