MPI4012V2-1R5-R Eaton

L08053R9DEWTR

Ind RF Chip Thin Film Multilayer 3.9nH 0.5nH 450MHz 27Q-Factor Ceramic 750mA 0805 T R

AISC-1008-2R7JT

Ind Chip Wirewound 2.7uH 5% 7.9MHz 22Q-Factor Ceramic 290mA 1008 T R

L-05B10NJV6T

Ind RF Chip Molded Multi-Layer 10nH 5% 100MHz 5Q-Factor Ceramic 250mA 0201 Paper T R

DLW21HN900SQ2L

Ind Common Mode Wirewound 90Ohm 100MHz 0805 Embossed T R

CMS2-4-R

Ind Common Mode 102uH 100KHz Ferrite 2.8A T R

LBM2016T101J

Ind Chip Wirewound 100uH 5% 796KHz 15Q-Factor Ferrite 80mA 0806 T R

1625812-2

Ind Power Shielded Wirewound 100uH 15% 1KHz 20Q-Factor Ferrite 1.1A T R

SRU1048-330Y

Ind Power Shielded Wirewound 33uH 30% 100KHz 24Q-Factor Ferrite 2.1A T R

PM0603-39NJ-RC

Ind Chip Wirewound 39nH 5% 250MHz 35Q-Factor Alumina 600mA 0603 T R

36502AR33JTDG

Ind High Frequency Chip Unshielded Wirewound 330nH 5% 250MHz 48Q-Factor 310mA 0805 T R