L-07C2N7SV6T

Ind RF Chip Multi-Layer 2.7nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 Paper T R

L-07C3N3SV6T

Ind RF Chip Multi-Layer 3.3nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 Paper T R

L-05B3N9SV6T

Ind RF Chip Multi-Layer 3.9nH 0.3nH 4Q-Factor Ceramic 300mA 0201 Paper T R

L-07C3N9SV6T

Ind RF Chip Multi-Layer 3.9nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 Paper T R

BLM41PG600SN1L

Ind Chip Bead 60Ohm 100MHz Ferrite 6A 1806 Embossed T R

L-07C4N7SV6T

Ind RF Chip Multi-Layer 4.7nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 Paper T R

L-07C18NJV6T

Ind RF Chip Multi-Layer 18nH 5% 100MHz 8Q-Factor Ceramic 200mA 0402 Paper T R

L-07W5N6JV4T

Ind RF Chip Wirewound 5.6nH 5% 250MHz 20Q-Factor Ceramic 760mA 0402 Paper T R

NPI43C100MTRF

Ind Power Unshielded Wirewound 10uH 20% 1KHz 1.1A T R

NPI65LS100MTRF

Ind Power Unshielded Wirewound 10uH 20% 100KHz 2.02A T R

NPI43C1R0MTRF

Ind Power Unshielded Wirewound 1uH 20% 100KHz 4A T R

NPIS65LS8R2MTRF

Ind Power Shielded Wirewound 8.2uH 20% 100KHz 2.6A 2424 T R

NPIS53D470MTRF

Ind Power Shielded Wirewound 47uH 20% 1KHz 620mA T R

NPIS60P100MTRF

Ind Power Shielded Wirewound 10uH 20% 100KHz 2.5A T R

DLW31SN261SQ2L

Ind Common Mode Choke Wirewound 260Ohm 25% 100MHz 310mA 1206 Embossed T R

DLW31SN900SQ2L

Ind Common Mode Shielded Wirewound 90Ohm 100MHz 1206 Embossed T R

NPIS43D820MTRF

Ind Power Shielded Wirewound 82uH 20% 1KHz 320mA T R

NPIS60P6R8MTRF

Ind Power Shielded Wirewound 6.8uH 20% 100KHz 3.5A T R

BLM03PG330SN1D

MONOLITHIC CERMIC CAPACITORS

BLM15AG601SH1D

Ind Chip Bead 600Ohm 25% 100MHz Ferrite 300mA 0402 Paper T R